K4E661612B-TC DATOVÝ,OBVOD,FUNKCE
K4E661612B-TC Datasheet PDF
| Výrobce | Balení | Popis | Teplota | |
|---|---|---|---|---|
| Samsung semiconductor | 16bit CMOS Dynamic with Extended Data |
K4E661612B-TC PDF | Min°C | Max°C |
- Samsung semiconductor K4E661612B
16bit CMOS Dynamic with Extended Data - Samsung semiconductor K4E661612B-L
16bit CMOS Dynamic with Extended Data - Samsung semiconductor K4E661612B-TC
16bit CMOS Dynamic with Extended Data - Samsung K4E661612B-TC45
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns - Samsung K4E661612B-TC50
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns - Samsung K4E661612B-TC60
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns - Samsung K4E661612B-TL45
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power - Samsung K4E661612B-TL50
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power - Samsung semiconductor K4E661612C
16bit CMOS Dynamic with Extended Data - Samsung semiconductor K4E661612C-45
16bit CMOS Dynamic with Extended Data - Samsung semiconductor K4E661612C-50
16bit CMOS Dynamic with Extended Data - Samsung semiconductor K4E661612C-60
16bit CMOS Dynamic with Extended Data - Samsung semiconductor K4E661612C-L
16bit CMOS Dynamic with Extended Data - Samsung semiconductor K4E661612C-L45
16bit CMOS Dynamic with Extended Data - Samsung semiconductor K4E661612C-L50
16bit CMOS Dynamic with Extended Data