2SC3601C DATOVÝ,OBVOD,FUNKCE
2SC3601C Datasheet PDF
| Výrobce | Balení | Popis | Teplota | |
|---|---|---|---|---|
| TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 | Min°C | Max°C |
- Sanyo Semicon Device 2SC3600
high-Definition Display Video Output Applications - 2SC3600C
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3600D
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3600E
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3600F
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - Sanyo 2SC3601
PNP/NPN Epitaxial Planar Silicon Transistors - 2SC3601C
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3601D
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3601E
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3601F
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3602
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | MICRO-X - NEC[NEC] 2SC3603
EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW-NOISE AMPLIFICATION - NEC[NEC] 2SC3604
EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW-NOISE AMPLIFICATION - Toshiba 2SC3605
VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS - 2SC3606
EPITAXIAL PLANAR TYPE (VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS)