IRF9Z14 DATOVÝ,OBVOD,FUNKCE
IRF9Z14 Datasheet PDF
| Výrobce | Balení | Popis | Teplota | |
|---|---|---|---|---|
| International Rectifier | Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) |
IRF9Z14 PDF | Min°C | Max°C |
- Samsung semiconductor IRF9130
P-CHANNEL POWER MOSFETS - Seme IRF9130SMD
P-CHANNEL POWER MOSFET HI.REL APPLICATIONS - Seme IRF9130SMD05
P-CHANNEL POWER MOSFET HI-REL APPLICATIONS - Samsung semiconductor IRF9131
P-CHANNEL POWER MOSFETS - Samsung semiconductor IRF9132
P-CHANNEL POWER MOSFETS - SAMSUNG[Samsung semiconductor] IRF9133
P-CHANNEL POWER MOSFETS - Seme IRF9140
P-CHANNEL POWER MOSFET - IRF9140SM
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 14A I(D) | LLCC - Samsung semiconductor IRF9141
P-CHANNEL POWER MOSFETS - Samsung semiconductor IRF9142
P-CHANNEL POWER MOSFETS - Samsung semiconductor IRF9143
P-CHANNEL POWER MOSFETS - Intersil Corporation IRF9150
-25A, -100V, 0.150 P-Channel Power MOSFET - IRF9151
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-204AA - International Rectifier IRF9230
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) - Intersil Corporation IRF9231
-5.5A -6.5A, -150V -200V, P-Channel Power MOSFETs